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  this is information on a product in full production. march 2014 docid024333 rev2 1/12 12 SPT02-236DDB automation sensor transient and overvoltage protection datasheet ? production data features ? double diode array for switch protection and reverse blocking protection ? 6 v to 36 v supply voltage range ? minimum breakdown voltage v br : 38 v ? 8/20 s 2 a maximum clamping voltage: 46 v ? blocking diode drop forward voltage v f : 1.1 v at 300 ma ? blocking diode maximum 10 ms square pulse current i fsm : 3 a ? ambient temperature: -40 c to +100 c ? qfn 2l 0.8 mm flat package complies with following standards ? voltage surge: iec 61000-4-5, r cc = 500 , 1 kv ? electrostatic discharge, iec 61000-4-2: ? 8 kv contact discharge ? 15 kv air discharge ? electrical transient immunity: iec 61000-4-4: 2 kv benefits ? compliant for interface with logic input type 1, 2 and 3 iec 61131-2 standard ? highly compact with integrated power solution in smd version applications ? factory automation sensor application ? proximity sensor interface protection ? transient and surge voltage protection ? compliant with sensor standard, en 60947-5-2 description the spt02 is specifically designed for the protection of 24 v proximity sensors. it implements the reverse polarity and the overvoltage protection of the sensor power supply and the power switch overvoltage protection. it provides a very compact and flexible solution. thanks to high performance st technology, the spt02 protects the proximity sensor to the highest level compliant with iec 61000-4-2, iec 61000-4-4 and iec 61000-4-5 standards. figure 1. functional diagram (top view) figure 2. bottom view qfn-2l SPT02-236DDB d1 d2 k a1 a2 www.st.com
basic application SPT02-236DDB 2/12 docid024333 rev2 1 basic application figure 3. stp02 configuration d1 d2 ls hs v cc p.supply gnd load sensor process control detector p.supply gnd load process control d1 d2 ls hs detector v cc sensor
docid024333 rev2 3/12 SPT02-236DDB characteristics 2 characteristics table 1. pinout connections (1) 1. see figure 1 symbol description k d1 power bus protection diode cathode and d2 reverse blocking protection cathode a1 d1 power bus protection diode anode a2 d2 reverse blocking protection anode table 2. absolute ratings (t amb = 25 c) symbol diode parameter value unit v pp all esd protection, iec 61000-4-2, per diode, in air (1) 1. see system oriented test circuits in figure 5 (esd) and figure 4 (surge as also described in iec 60947-5-2). 30 kv esd protection, iec 61000-4-2, per diode, in contact (1) 30 kv v pp all peak surge voltage, iec 61000-4-5, per diode, r cc = 500 , (1) 1kv p pp all peak pulse current, t j = t amb = 85 c, t p = 8/20 s 1400 w i pp all peak pulse power dissipation, t j = t amb = 85 c, t p = 8/20 s 25 a i fsm all maximum forward surge current, t p = 10 ms square 3 a e ar d1 maximum repetitive avalanche energy l= 1 h, i ras = 0.3a, r s = 100 , v cc = 30 v, t amb = 85 c, (1) 66 mj t j all storage junction temperature range - 40 to 150 c table 3. recommended operating conditions symbol parameter value unit v cc operating power bus supply voltage -30 to 35 v pulse repetitive voltage t p = 0.5 s, r cc = 500 -30 to 37 v i f d2 forward peak current t j = 150 c duty cycle = 50% 300 ma t amb operating ambient temperature range -40 to 100 c t j operating junction temperature range (1) 1. extended from dc operating at 150 c up to peak repetitive value during the inductive load demagnetization -40 to 150 c
characteristics SPT02-236DDB 4/12 docid024333 rev2 table 4. thermal resistance symbol parameter value unit rth(j-a) smd thermal resistance junction to ambient, per diode fr4 board, copper thickness = 35 m, recommended footprint 230 c/w zth(j-a) smd thermal transient impedance junction to ambient, per diode t p = 15 ms, t amb = 85 c, recommended footprint 6.5 c/w table 5. electrical characteristics (t j = 25 c, unless otherwise specified) symbol diode name test conditions value unit v rm all reverse stand off voltage i r = 200 na min 33 v i r = 1 a min 36 i rm all leakage reverse current v rm = 36 v (1) 1. voltage applied at the nodes of each diode max 1 a v rm = 36 v, t j = 150 c max 5 a v br all reverse breakdown voltage i r = 1 ma min 38 v typ 41.4 v v cl all peak clamping voltage i pp = 2 a, t p = 8 /20 s max 46 v typ 44 v r d all 8/20s dynamic resistance typ 0.5 tallv br temperature sensitivity (2) 2. v br @ t j = v br @25 c x (1+ t x (t j - 25)) max 17 10 -4 /c v cl d1 peak clamping voltage i r = 0.3 a, l = 1 h, v cc = 30 v max 46 v v f d2 forward drop voltage i f = 300 ma max 1.1 v
docid024333 rev2 5/12 SPT02-236DDB system related electromagnetic compatibility ratings 3 system related electromagnetic compatibility ratings figure 4. surge voltage test circuit according to iec 61000-4-5 with 500 serial resistor figure 5. esd test circuit according to ie 61000-4-2 figure 6. eos test circuit according to ie 61000-4-5 4 evaluation of the clamping voltage v br (t j ) = v br (25) x (1+ t (t j ? 25)) v cl max (8/20 s) = v br max + r d x i pp r = 2 cf = 18 pe diode under test high voltage surge generator r = 300 diode under test esd voltage source cf = 150 p esd generator r = 2 cf = 18 d1 d2 ls hs sensor detector pe high voltage surge generator
application considerations SPT02-236DDB 6/12 docid024333 rev2 5 application considerations 5.1 demagnetization of an inductive load driven by the switch protection diode. the turn off energy eoff that could be dissipated in the d1 diode is calculated as shown in an587 and an1351 application notes: e off = v br x l / / (r s )2 x [v cc + (v cc - v br ) x ln (v br / (v br - v cc ))] t off = l x ln (v br / (v br - v cc )) / r s p off = e off / t off with l = 1 h; i = 0.3 a; v br = 39 v; v cc = 30 v, r s = 100 the stress withstood by d 1 becomes: e off = 65 mj; t off = 15 ms; p off = 4.3 w in a single pulse mode operation, the junction temperature can be fairly estimated: t j = t amb + [z th (t off ) x p off ] in a repetitive operation with an f repetitive rate, p av = e off x f t j_av = t amb + p av x r th_ja and during the demagnetization t off , t j_pk < t j_av + p off x z th (t off ) z th is the transient thermal impedance of each diode for a pulse having a duration t off . figure 7. electrical diagram for inductive load demagnetization 5.2 life time considerations life time of the product is calculated to exceed 10 years. the key parameters to consider are the ambient temperature ( t amb < 100 c), the power supply voltage (v cc < 30 v), and the current in the reverse blocking diode (i f = 0.1 a switching at 0.5 hz with 50% duty cycle, the stand-by current being less than 1.5 ma). for higher current or higher switching frequency operation, the life time should be calculated considering the peak and average junction temperature. load d1 v cc v br switch r s l load d d1 v cc v br switch load d2 d1 v cc v br switch r s l
docid024333 rev2 7/12 SPT02-236DDB package information 6 package information ? epoxy meets ul94,v0 ? lead-free package in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark. figure 8. qfn-2l dimensions (definitions) table 6. qfn-2l dimensions (values) ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.70 0.75 0.80 0.027 0.029 0.031 a1 0.00 0.02 0.05 0.00 0.001 0.002 b 0.25 0.30 0.35 0.010 0.011 0.014 d - 3.30 - - 0.13 - d2 1.85 2.00 2.10 0.073 0.079 0.082 e - 1.50 - - 0.06 - e2 0.90 1.05 1.16 0.035 0.041 0.046 e - 2.8 - - 0.110 - l 0.97 1.07 1.18 0.038 0.042 0.046 d d2 b e e2 a1 a l e
package information SPT02-236DDB 8/12 docid024333 rev2 figure 9. footprint (dimensions in mm) 0.50 0.25 1.05 1.07 2.00 0.50
docid024333 rev2 9/12 SPT02-236DDB recommendation on pcb assembly 7 recommendation on pcb assembly 7.1 stencil opening design 1. general recommendation on stencil opening design a) stencil opening dimensions: l (length), w (width), t (thickness). figure 10. stencil opening dimensions b) general design rule stencil thickness (t) = 75 ~ 125 m 2. reference design a) stencil opening thickness: 100 m b) stencil opening for central exposed pad: opening to footprint ratio is 50%. c) stencil opening for leads: opening to footprint ratio is 90%. 7.2 solder paste 1. halide-free flux qualification rol0 according to ansi/j-std-004. 2. ?no clean? solder paste is recommended. 3. offers a high tack force to resist component movement during high speed. 4. solder paste with fine particles: powder particle size is 20-45 m. l t w aspect ratio w t ----- 1,5 = aspect area lw 2t l w + () --------------------------- - 0,66 =
recommendation on pcb assembly SPT02-236DDB 10/12 docid024333 rev2 7.3 placement 1. manual positioning is not recommended. 2. it is recommended to use the lead rec ognition capabilities of th e placement system, not the outline centering. 3. standard tolerance of 0.05 mm is recommended. 4. 3.5 n placement force is recommended. too much placement force can lead to squeezed out solder paste and cause solder joints to short. too low placement force can lead to insufficient contact between package and solder paste that could cause open solder joints or badly centered packages. 5. to improve the package placement accuracy, a bottom side optical control should be performed with a high resolution tool. 6. for assembly, a perfect supporting of the pcb (all the more on flexible pcb) is recommended during solder paste printing, pick and place and reflow soldering by using optimized tools. 7.4 pcb design preference 1. to control the solder paste amount, the closed via is recommended instead of open vias. 2. the position of tracks a nd open vias in the solder area should be well balanced. the symmetrical layout is recommended, in case any tilt phenomena caused by asymmetrical solder paste amount due to the solder flow away. 7.5 reflow profile figure 11. st ecopack ? recommended soldering reflow profile for pcb mounting note: minimize air convection currents in the reflow oven to avoid component movement. compliant with j-std-020d soldering profile 250 0 50 100 150 200 240 210 180 150 120 90 60 30 300 270 - 6c/s 240-245 c 2 - 3 c/s temperature (c) -2 c/s -3 c/s time (s) 0.9 c/s 60 sec (90 max)
docid024333 rev2 11/12 SPT02-236DDB ordering information 8 ordering information figure 12. ordering information scheme 9 revision history table 7. ordering information order code marking package weight packing SPT02-236DDB s2 qfn-2l with exposed pad 15.55 mg tape and reel spt 02 - 2 36 ddb sensor protection termination generation 02 = 2 gnration nde channels number 2 = 2 channels 36 = 36 v package d = dual d = 3 x 2 mm package size b = 3 pins stand-off voltage table 8. document revision history date revision changes 06-may-2013 1 first issue 21-mar-2014 2 updated table 2 , table 6 and figure 9 .
SPT02-236DDB 12/12 docid024333 rev2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. st products are not designed or authorized for use in: (a) safety critical applications such as life supporting, active implanted devices or systems with product functional safety requirements; (b) aeronautic applications; (c) automotive applications or environments, and/or (d) aerospace applications or environments. where st products are not designed for such use, the purchaser shall use products at purchaser?s sole risk, even if st has been informed in writing of such usage, unless a product is expressly designated by st as being intended for ?automotive, automotive safety or medical? industry domains according to st product design specifications. products formally escc, qml or jan qualified are deemed suitable for use in aerospace by the corresponding governmental agency. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2014 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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